期刊 Study on Surface Morphology of GaN Growth by MOCVD on GaN/Si(111) Template  

Study on Surface Morphology of GaN Growth by MOCVD on GaN/Si(111) Template

作  者:Liu Zhe Wang Junxi Wang Xiaoliang Hu Guoxin Guo Lunchun Liu Hongxin Li Jianping Li Jinmin Zeng Yiping 

机构地区:[1]Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

出  处:《稀土学报:英文版》2006年第z1期11-13,共3页

Study on Surface Morphology of GaN Growth by MOCVD on GaN/Si(111) Template

摘  要:The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

关 键 词:SURFACE MORPHOLOGY GaN/Si TEMPLATE GAN MOCVD 

分 类 号:TN304.2[电子电信—物理电子学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关文献:

正在载入数据...

北京电子科技职业学院特色库 版权所有 ©2018