期刊 肖特基栅型共振隧穿三极管器件模型的研究  

Research on a device model for Schottky gate resonant tunneling transistors

作  者:宋瑞良[1,2] 毛陆虹[1] 郭维廉[1] 谢生[1] 齐海涛[1] 张世林[1] 梁惠来[1] 

Song, Ruiliang[1,2]; Mao, Luhong[1]; Guo, Weilian[1]; Xie, Sheng[1]; Qi, Haitao[1]; Zhang, Shilin[1]; Liang, Huilai[1]

机构地区:[1]天津大学电信学院 [2]南开大学光电子所

出  处:《高技术通讯》2010年第6期632-636,共5页Chinese High Technology Letters

Research on a device model for Schottky gate resonant tunneling transistors

基  金:973计划(2002CB311905)资助项目

摘  要:基于共振隧穿二极管(RTD)的电流-电压方程,结合对肖特基栅型共振隧穿三极管(SGRTT)物理机制的分析和计算,推导出了SGRTT器件的器件模型。根据实际器件的材料结构、版图参数等指标计算得到的SGRTT器件模型,能很好地与实际器件的特性相吻合。利用PSPICE软件,该模型可准确快捷地实现电路功能验证和仿真,此项研究的结果为共振隧穿器件的电路集成和研制奠定了基础。

Based on the current-voltage equation of resonant tunneling diodes (RTD) and the analysis and computation of the physical theory mechanism of Schottky gate resonant tunneling transistors (SGRTT), a SGRTI" device model is deduced and realized in this paper. The experimental results show that the model obtained through calculation of material and layout parameters of the devices can well fit the experimental curves. The model can also implement the circuit function test and simulation for the devices accurately and conveniently using the PSPICE software. The establishment'of the model can lay a foundation for the circuit integration and development of resonant tunneling devices.

关 键 词:共振隧穿三极管(RTT) 器件模型 肖特基接触 

resonant tunneling transistor(RTT)  device model  Schottky contact 

分 类 号:TN312.2[电子电信—物理电子学]

 

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