期刊 太赫兹倍频器研究进展  

Research development of CMOS terahertz doublers

作  者:宋瑞良 汪春霆[1] 

SONG Ruiliang;WANG Chunting(The 54th Research Institute, China Electronics Technology Group Corporation,Beijing 100070,China)

机构地区:[1]中国电子科技集团公司第五十四研究所

出  处:《太赫兹科学与电子信息学报》2019年第3期364-367,共4页Journal of Terahertz Science and Electronic Information Technology

Research development of CMOS terahertz doublers

摘  要:太赫兹CMOS电路具有小型化、与大规模硅基工艺兼容的特点,非常适合未来太赫兹通信以及5G通信的应用。本文以太赫兹CMOS本振电路为切入点,调研了国际和国内的最新CMOS倍频器电路结构,在此基础上,对推推(push-push)倍频器、注入锁定倍频器以及混频倍频器的电路结构和特点进行了详细介绍。通过对以上几种倍频器的分析对比,总结了不同的倍频器在实际应用中的优缺点,为太赫兹射频前端小型化实际应用奠定基础。

Terahertz CMOS circuits are much proper for THz communication and 5G communications application because of its small-size and compatibility with large scale silicon technology. Starting from THz CMOS doublers circuits, the state of the art of CMOS frequency multiplier circuit structures are investigated. The features and structures of push-push, injection locking and mixing doublers are introduced in detail. Through the analysis and comparison of above frequency multipliers, the advantages and disadvantages of different frequency multipliers in practical applications are summarized, which would lay a foundation for the small-size THz RF front-end in the future.

关 键 词:太赫兹 倍频器 注入锁定 

terahertz doubler injection locking 

分 类 号:TN771[电子电信—电路与系统]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关文献:

正在载入数据...

北京电子科技职业学院特色库 版权所有 ©2018