期刊 Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes  

作  者:Ryong Lee, Byeong; Geun Kim, Tae

机构地区:School of Electrical Engineering, Korea University, Seoul 136-701, Korea

出  处:Journal of Nanoscience and Nanotechnology2017,17(1),454-459,6

语  种:外文

出 版 国:美国

摘  要:This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (��) of the films using chemical doping with AuCl<sub>3</sub>, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO<sub>3</sub>; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO<sub>3</sub> exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

关 键 词:GaN  Light-Emitting Diodes  Reduced Graphene Oxide  Single-Walled Carbon Nanotube 

 

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