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期刊SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY; SCI CHINA PHYS CHEM; Sci. China-Phys. Mech. Astron.; SC CHI-P M; SCI CHINA-PHYS MECH ASTRON; Structural p
《SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY》Xie, ZL;Zhou, YJ;Song, LH;Liu, B;Hua, XM;Xiu, XQ;Zhang, R;Zheng, YD
关键词:gan  XRD  dislocation  epitaxial 
期刊A gan nanoneedle inorganic/organic heterojunction structure for optoelectronic devices
《Materials Letters》Min Jeong Shina, Minji Kima, Gang Seok Leea, Hyung Soo Ahna, Sam Nyung Yia, snyi@hhu.ac.kr, Dong Han Hab
We studied an inorganic/organic hybrid heterostructure for optoelectronic device and applications. The structure was fabricated using inorganic material consisting of gan nanoneedles and the hole-conducting polymer PE...显示全部
关键词:gan  Hybrid  Heterojunction  Nanomaterials 
期刊Electronic Properties of gan (0001) – Dielectric Interfaces
《International Journal of High Speed Electronics & Systems》Cook, T. E.;Jr.[1];Fulton, C. C.[1];Mecouch, W. J.[1];Davis, R. F.[1];Lucovsky, G.[1];Nemanich, R. J.[1]
The characteristics of clean n- and p-type gan (0001) surfaces and the interface between this surface and SiO[2], Si[3]N[4], and HfO[2] have been investigated. Layers of SiO[2], Si[3]N[4], or HfO[2] were carefully dep...显示全部
关键词:dielectric interfaces Electronic properties gan 
期刊Theoretical study of orientation dependence of piezoelectric effects inwurtzite strained GaInN/gan heterostructures and quantum wells
《Japanese Journal of Applied Physics》Takeuchi T.; Akasaki I.; Amano H.
We calculated the crystal orientation dependence of piezoelectric fields inwurtzite strained Ga0.5In0.1N/gan heterostructures. The highest longitudinal piezoelectric field of0.7 MV/cm can be generated in (0001)-orient...显示全部
关键词:gan  Gainn  Piezoelectric field  Crystal orientation  Transitionprobability  Epitaxial-growth  gan  Fields  Spectroscopy  Layer  Aln 
期刊Electrical characterization of trapping phenomena at SiO<sub>2</sub>/SiC and SiO<sub>2</sub>/gan in MOS-based devices
《Physica Status Solidi (a) - Applications and Materials Science》Patrick Fiorenza[1,*]; Giuseppe Greco[1]; Marilena Vivona[1]; Filippo Giannazzo[1]; Salvatore Di Franco[1]; Alessia Frazzetto[2]; Alfio Guarnera[2]; Mario Saggio[2]; Ferdinando Iucolano[2]; Alfonso Patti[2]; Fabrizio Roccaforte[1]
In this paper, some aspects of the electrical characterization of trapping phenomena occurring at interfaces between insulators and wide band semiconductors (WBG) are presented, with a focus on the SiO<sub>2<...显示全部
关键词:electrical properties gan interfaces metal-oxide-semiconductor structures SiC SiO2 
期刊Algan/gan-Based Diodes and Gateless HEMTs for Gas and Chemical Sensing
《IEEE Sensors Journal》B. S. Kang; Suku Kim; Fan Ren; Brent P. Gila; Cammy R. Abernathy; Stephen J.Pearton
The characteristics of Pt/gan Schottky diodes and Sc_(2)O_(3)/Algan/ganmetal-oxide semiconductor (MOS) diodes as hydrogen and ethylene gas sensors and of gatelessAlgan/gan high-electron mobility transistors (HEMTs) as...显示全部
关键词:gan  metal-oxide semiconductor (MOS) diodes  Schottky diodes  sensors 
期刊插入δAl/AlN缓冲层在Si(111)上生长gan被引量:2
《半导体学报:英文版》2007年第z1期234-237,共4页郭伦春 王晓亮 胡国新 李建平 罗卫军 
采用MOCVD(metal organic chemical vapor deposition)生长方法,对比在AlN层上加入δAl/AlN缓冲层和不加入δAl/AlN缓冲层两种生长结构,在Si(111)衬底上生长gan.实验结果表明,在加入δAl/AlN缓冲层后,gan外延层的裂纹密度得到了有效的降...显示全部
关键词:gan MOCVD ALN 缓冲层 
期刊脊形结构gan蓝光激光器的热模拟分析被引量:2
《半导体学报:英文版》2004年第12期1680-1684,共5页叶晓军 种明 陈良惠 
国家高技术研究发展计划资助项目 (批准号 :2 0 0 2 AA3 1116Z)~~
利用二维热传导模型分析了 Ga N激光器的温度特性 .计算了有源区在连续工作条件下的最大温升 ,分析了激光器工作时的功率密度和 p电极比接触电阻率等参数对温度特性的影响 .模拟结果表明 ,采用不同衬底和不同装配形式对器件温度特性的...显示全部
关键词:半导体激光器 gan 热模拟 热阻 
期刊gan和GaPN混晶
《电子材料快报》1995年第7期4-5,共2页一凡 
关键词:gan GaPN 远紫外激光材料 激光材料 
期刊gan基发光材料被引量:2
《化学教育》2001年第10期3-6,共4页王立 李述体 江风益 余淑娴 
本文概述了gan基发光材料的基本特性和gan基器件的应用领域及未来的发展前景。简述了gan基材料的生长技术 。
关键词:gan 发光材料 金属有机化学气相沉积 氮化镓 半导体材料 制备 氮化镓基器件 
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